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ZXMN0545G4
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
I =1mA, V DS = V GS
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
SYMBOL
BV DSS
V GS(th)
MIN.
450
1
MAX.
3
UNIT
V
V
CONDITIONS
I D =1mA, V GS =0V
D
Gate-Body Leakage
I GSS
20
nA
V GS =
20V, V DS =0V
Zero Gate Voltage Drain
Current
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
I DSS
I D(on)
R DS(on)
150
10
400
50
μ A
μ A
mA
?
V DS =450 V, V GS =0V
V DS =405 V, V GS =0V,
T=125°C (2)
V DS =25 V, V GS =10V
V GS =10V, I D =100mA
Forward Transconductance (1)(2) g fs
100
mS
V DS =25V, I D =100mA
Input Capacitance
(2)
C iss
70
pF
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
C oss
C rss
10
4
pF
pF
V DS =25V, V GS =0V, f=1MHz
Turn-On Delay Time
(2)(3)
t d(on)
7
ns
Rise Time
(2)(3)
t r
7
ns
V DD =25V, I D =100mA
Turn-Off Delay Time
(2)(3)
t d(off)
16
ns
Fall Time
(2)(3)
t f
10
ns
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle
2%
(2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
ISSUE 1 - JANUARY 2006
3
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